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Proceedings Paper

Etch tailoring through flexible end-point detection
Author(s): David Angell; Gottleib S. Oehrlein
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Paper Abstract

Accurate measurement in-situ and in real-time of film thickness during Reactive Ion Etching (THE) can lead to new levels of process control. The two techniques described are used to stop an etch close to an interface less than 5Onm and have an accuracy of 3nm and 8nm respectively. The long term goal etch tailoring depends on pin-pointing in real-time the film remaining to be etched. With etch tailoring process parameters can be changed to improve product quality.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48947
Show Author Affiliations
David Angell, IBM/Thomas J. Watson Research Ctr. (United States)
Gottleib S. Oehrlein, IBM/Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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