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Proceedings Paper

Monitoring and control of rf electrical parameters near plasma loads
Author(s): Paul Rummel
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Paper Abstract

Today''s semiconductor processing equipment demands accurate and repeatable controls to obtain improved yields of increasingly complex chemistries and smaller geometries. Electrical control of RF induced plasmas has sadly lacked the precision of modern gas flow pressure and chemistry control and hence is a major limiting factor to process repeatability and diagnostics. Present technology which is decades old maintains a constant indicated forward power at the RF source regardless of mismatch reflections transmission line losses non-repeatable impedance matching losses reactor feed losses and RF envelope modulation due to plasma load non-linearities interacting with power source instabilities. Process diagnostics is often reduced to a guessing game once gas flow and pressure controls are checked against each other. Comdel Inc. has produced a new product to remove some of the ''black art'' from RE control and analysis. The RPM-l (Real Power Monitor) is intended to become center of the RE delivery system. Consisting of a sensor unit and a processor unit the RPM-i controls the RE power source based upon real power RF voltage RF current or DC bias at the point where the sensor unit is installed regardless of the load impedance. The user interface to control and read these RE electrical parameters is an ASCII terminal or host computer via an RS- 232 serial port on the processor unit. The RPM-l also calculates and displays on the terminal the plasma load impedance

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48934
Show Author Affiliations
Paul Rummel, Comdel Inc. (United States)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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