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Proceedings Paper

Application of adaptive network theory to dry-etch monitoring and control
Author(s): V. G. I. Deshmukh; D. A. O. Hope; Tim I. Cox; A. J. Hydes
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Paper Abstract

Initial results on the application of adaptive network concepts to the problem of dry etching control are given in this paper. The role of off-line experimentation and analysis in defining a suitable parametric model for a dry etching process is first described. Alternative methods of parameter estimation are compared. An embryonic on-line regulator is then outlined. This has been used to control a parameter of interest namely the bias at the wafered electrode DCBW of a reactive ion etching (RIE) station. Successful tracking of a randomized trajectory for DCBW is demonstrated.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48929
Show Author Affiliations
V. G. I. Deshmukh, Royal Signals and Radar Establishment (United Kingdom)
D. A. O. Hope, Royal Signals and Radar Establishment (United Kingdom)
Tim I. Cox, Royal Signals and Radar Establishment (United Kingdom)
A. J. Hydes, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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