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Reactive ion etching of deep isolation trenches using sulfur hexafluoride, chlorine, helium, and oxygen
Author(s): Theresa M. Krawiec; Nicholas J. Giammarco
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48921
Show Author Affiliations
Theresa M. Krawiec, IBM Corp. (United States)
Nicholas J. Giammarco, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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