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Proceedings Paper

LH electron cyclotron resonance plasma source
Author(s): K.-H. Kretschmer; Gerhard Lorenz; G. Castrischer; I. Kessler; P. Baumann
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Paper Abstract

The further development in semiconductor technology toward smaller dimensions and higher densities calls for low-energy high-power plasma sources in etching and deposition as well. An ECR plasma source developed by Leybold (LH) with an effective diameter of 9" is described. The radially symmetric construction of the source as well as the chosen microwave input allows wafers with diameter up to 200 mm to be processed with high uniformity. Special empasise has been given to minimum particle and damage generation. Several etch processes are presented to demonstrate the application potential of the source.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48919
Show Author Affiliations
K.-H. Kretschmer, Leybold AG (Germany)
Gerhard Lorenz, Leybold AG (Germany)
G. Castrischer, Leybold AG (Germany)
I. Kessler, Leybold AG (Germany)
P. Baumann, Leybold AG (Germany)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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