Share Email Print

Proceedings Paper

Plasma diagnostics as inputs to the modeling of the oxygen reactive ion etching of multilevel resist structures
Author(s): D. A. O. Hope; A. J. Hydes; Tim I. Cox; V. G. I. Deshmukh
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper describes the use of physical diagnostics of plasma and etch reactor to provide a predictive capability for a particular dry etching process namely the reactive ion etching of organic polymers in an oxygen plasma. In particular the shape (isotropy) of etched features has been studied as a function of the potential DCB between the wafer and the plasma. The flux of oxygen atoms to the wafer has been estimated by measuring the rate of oxidation of a pure silver film deposited onto a quartz crystal microbalance. A discoid electrostatic probe has been used to determine the flux of energetic oxygen molecular ions. The energy (E) and angular (cr) distribution of energetic species N(a at the wafer surface has been obtained from a Monte Carlo simulation of the transport of ions across the plasma sheath. The measured magnitudes of the fluxes of oxygen atoms and energetic particles together with N(a have been incorporated into a simple model to simulate the etching process. Predicted etch rates and profiles are compared with experimental results of etching multilevel resist structures under corresponding conditions.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48913
Show Author Affiliations
D. A. O. Hope, Royal Signals and Radar Establishment (United Kingdom)
A. J. Hydes, Royal Signals and Radar Establishment (United Kingdom)
Tim I. Cox, Royal Signals and Radar Establishment (United Kingdom)
V. G. I. Deshmukh, Royal Signals and Radar Establishment (United Kingdom)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

© SPIE. Terms of Use
Back to Top