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Proceedings Paper

SPEEDIE: a profile simulator for etching and deposition
Author(s): James P. McVittie; Juan C. Rey; A. J. Bariya; M. M. IslamRaja; L. Y. Cheng; S. Ravi; Krishna C. Saraswat
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Paper Abstract

SPEEDIE is a new physically based profile simulator for dry etching and LPCVD. It calculates angular and energy distributions of ions and fast neutrals using a Monte Carlo (MC) simulator for ion sheath transport. Fluxes at each point on the profile can be calculated using either MC or analytical methods which consider 3-D transport by molecular flow surface diffusion and adsorption/re-emission. Etch rates are determined using a choice of etch models while LPCVD uses a sticking coefficient model. A modified string algorithm which allows simultaneous etching and deposition is used to move the surface. Examples which match experiments are given for sloped oxide etching and oxide filling of trenches and vias.

Paper Details

Date Published: 1 March 1991
PDF: 13 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48908
Show Author Affiliations
James P. McVittie, Stanford Univ. (United States)
Juan C. Rey, Stanford Univ. (United States)
A. J. Bariya, Stanford Univ. (United States)
M. M. IslamRaja, Stanford Univ. (United States)
L. Y. Cheng, Stanford Univ. (United States)
S. Ravi, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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