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Proceedings Paper

Oxygen reactive ion etching of polymers: profile evolution and process mechanisms
Author(s): Wolfgang Pilz; Joachim Janes; Karl Paul Muller; Joachim Pelka
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Paper Abstract

Oxygen plasmas either in a reactive ion etching reactor or in a reactive ion beam etcher are used to demonstrate the capability to produce sub-half-micron features in photoresists with high aspect ratios in multi-level technique. Lower local etch rates for structures with increasing aspect ratios are evaluated. The geometry limited flux of neutrals into the structures leads to decreasing etch rates of the bottom resist with increasing aspect ratio. The role of sidewall passivation films for highly anisotropic etching is discussed. Sidewall passivation films are extremely stable with respect to further processing. Even highly reactive plasmas are not able to remove the passivating films completely. In all our experiments of re sist patterning in 02-plasmas we saw that highly anisotropic etching works only with a sidewall passivating layer.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48905
Show Author Affiliations
Wolfgang Pilz, Fraunhofer-Institut fuer Mikrostrukturtechnik (Germany)
Joachim Janes, Fraunhofer-Institut fuer Mikrostrukturtechnik (Germany)
Karl Paul Muller, Fraunhofer-Institut fuer Mikrostrukturtechnik (Germany)
Joachim Pelka, Fraunhofer-Institut fuer Mikrostrukturtechnik (Germany)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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