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Proceedings Paper

Influence of sheath properties on the profile evolution in reactive ion etching processes
Author(s): Andreas Fichelscher; Ivo W. Rangelow; Andreas Stamm
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Paper Abstract

The ion transport through the sheath as the process that primarily determines the energy and angular distributions of ions striking the substrate is simulated with Monte-Carlo methods. The effect of pressure on these distributions is known to be characterized by the proportion of mean free path to sheath thickness while the influence of frequency on the energy and angular distributions may be characterized by the proportion of the period of the applied voltage to the time the ion spents in the sheath. The even at high frequencies frequently observed double-peaked shape of the energy spectra is investigated and the dependence of the angular distribution on energy is shown to be contingent on the influence of collisions within the sheath. Finally the influence of the divergence of the ion stream represented by the ion angular distribution on the final profile evolution is demonstrated with the SPEED-Simulator (Simulation of profile evolution with etching and deposition)14.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48904
Show Author Affiliations
Andreas Fichelscher, Univ. of Kassel (Germany)
Ivo W. Rangelow, Univ. of Kassel (Germany)
Andreas Stamm, Plasma Technology Ltd. (Germany)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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