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Proceedings Paper

Influence of sheath properties on the profile evolution in reactive ion etching processes
Author(s): Andreas Fichelscher; Ivo W. Rangelow; Andreas Stamm
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Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48904
Show Author Affiliations
Andreas Fichelscher, Univ. of Kassel (Germany)
Ivo W. Rangelow, Univ. of Kassel (Germany)
Andreas Stamm, Plasma Technology Ltd. (Germany)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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