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Proceedings Paper

Characteristics of gate oxide surface material after exposure to magnetron-enhanced reactive ion etching plasma
Author(s): Jennifer M. Webb; Zahra H. Amini
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Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48901
Show Author Affiliations
Jennifer M. Webb, Applied Materials, Inc. (United States)
Zahra H. Amini, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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