Share Email Print
cover

Proceedings Paper

Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology
Author(s): Mathieu Marin; M. Jamal Deen; Mario de Murcia; Pierre Llinares; Jean Charles Vildeuil
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigate the impact of body biasing on the low frequency noise (LFN) performances of NMOS transistors from a transistors 130 nm CMOS technology. The body-to-source voltage VBS was varied from - 0.5 to + 0.5 V for reverse and forward mode substrate biasing. A detailed electrical characterization was performed and the benefits of the body bias analysed in terms of current and maximum transconductance variations. Noise measurements were first performed at low drain bias VDS = 25 mV and VBS = 0 V in order to discuss the noise model. Results are in agreement with the carrier number fluctuation theory. Bulk bias dependence of the LFN was investigated at VDS = VDD = 1.2 V. Significant noise reduction is observed in the subthreshold regime when applying a forward body bias. In strong inversion, the noise level is found to be approximately independent of the substrate bias VBS.

Paper Details

Date Published: 12 May 2003
PDF: 10 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488964
Show Author Affiliations
Mathieu Marin, STMicroelectronics (France)
Univ. Montpellier II (France)
M. Jamal Deen, Univ. Montpellier II (France)
McMaster Univ. (Canada)
Mario de Murcia, Univ. Montpellier II (France)
Pierre Llinares, STMicroelectronics (France)
Jean Charles Vildeuil, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

© SPIE. Terms of Use
Back to Top