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Proceedings Paper

Microscopic investigation of large-signal noise in semiconductor materials and devices
Author(s): Tomas Gonzalez; Susana Perez; Eugenij Starikov; Pavel Shiktorov; Viktoras Gruzinskis; Lino Reggiani; Luca Varani; Jean Claude Vaissiere
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Paper Abstract

The investigation of noise in electronic devices operating under large-signal conditions is attracting increasing attention in recent years. Theoretical analyses on this subject are typically performed in the framework of the impedance field method, implemented under the drift-diffusion approximation. As an alternative, a more general microscopic approach including a more detailed physical description of the systems is mandatory. This work reviews recent results of Monte Carlo simulations of electronic noise in bulk materials and submicron semiconductor structures subject to high-frequency large-amplitude periodic electric fields or applied voltages/currents. The peculiarity of the noise analysis under large-signal operation is that velocity or current/voltage fluctuations appear simultaneously with the regular response of the nonlinear medium or device, so that the regular response and noise spectra are overlapped in the whole frequency range of interest. Here, various correlation functions of fluctuations, their instantaneous and integrated spectral densities, etc. are calculated under large-signal operation for compound semiconductors, such as GaAs, and InN, as well as for GaAs Schottky-barrrier diodes and n+nn+ structures. A comparison with the results obtained under stationary conditions is performed. Under these large-signal cyclostationary working conditions, when the system response becomes nonlinear, several modifications and anomalies appear in the noise spectra with respect to static stationary conditions. In particular, an increase of the low-frequency noise and a resonant-like enhancement of the spectra near the fundamental frequency (and eventually high-order harmonics) of the applied signal is observed under some specific conditions. These anomalies are interpreted as a manifestation of dynamical effects under sufficiently high frequency and amplitude of the applied signal. Similarities and differences of the noise resonant-like enhancement around the fundamental frequency with noise upconversion processes are discussed.

Paper Details

Date Published: 12 May 2003
PDF: 15 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488959
Show Author Affiliations
Tomas Gonzalez, Univ. de Salamanca (Spain)
Susana Perez, Univ. de Salamanca (Spain)
Eugenij Starikov, Semiconductor Physics Institute (Lithuania)
Pavel Shiktorov, Semiconductor Physics Institute (Lithuania)
Viktoras Gruzinskis, Semiconductor Physics Institute (Lithuania)
Lino Reggiani, INFM (Italy)
Univ. degli Studi di Lecce (Italy)
Luca Varani, Univ. Montpellier II (France)
Jean Claude Vaissiere, Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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