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Proceedings Paper

Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region
Author(s): Sung-min Hong; Yong-Seok Kim; Hong Shick Min; Young June Park
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Paper Abstract

The characteristic potential method(CPM), which has been successfully applied to calculate 1/f noise and thermal noise of multi-terminal homogeneous semiconductor resistors, is extended to calculate 1/f noise in inhomogeneous devices such as MOSFETs. The drain 1/f noise current of MOSFETs in the linear region is calculated using the CPM together with the well-known existing 1/f noise sources based on either Hooge's empirical model or McWhorter's model, and the calculated results are compared with the experimental results. It is shown that the difference of the 1/f noise behaviour between n-MOSFETs and p-MOSFETs in the linear region can be attributed to either the difference in their effective field dependence between the local electron mobility and the local hole mobility near the Si-SiO2 interface in the inversion layer or the difference in degree of Nt(oxide trap density)dependence between the effective electron mobility and the effective hole mobility.

Paper Details

Date Published: 12 May 2003
PDF: 15 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488947
Show Author Affiliations
Sung-min Hong, Seoul National Univ. (South Korea)
Yong-Seok Kim, Seoul National Univ. (South Korea)
Hong Shick Min, Seoul National Univ. (South Korea)
Young June Park, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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