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Proceedings Paper

Generation-recombination noise in GaN and GaN-based devices
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Paper Abstract

Generation-recombination (GR) noise in GaN and AlGaN thin films, GaN based Metal Semiconductor Field Effect Transistors (MESFETs), Heterostructure Field Effect Transistors (HFETs) and Schottky diode photodetectors was investigated. AlGaN thin films, AlGaN/GaN HFETs and Schottky barrier Al0.4Ga0.6N diodes exhibited GR noise with activation energies of 0.8 - 1 eV. AlGaN/GaN HFETs also presented GR noise with activation energies of 1 - 3 meV and 0.24 eV at cryogenic temperatures. No such noise was observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). We conclude that the local levels responsible for the observed noise in HFETs and DHFETs could be located in AlGaN barrier layers.

Paper Details

Date Published: 12 May 2003
PDF: 15 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.488468
Show Author Affiliations
Nezih Pala, Rensselaer Polytechnic Institute (United States)
Sensor Electronic Technology, Inc. (United States)
Sergey L Rumyantsev, Rensselaer Polytechnic Institute (United States)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)
Michael E. Levinshtein, A.F. Ioffe Physico-Technical Institute (Russia)
M. Asif Khan, Univ. of South Carolina (United States)
Grigory S. Simin, Univ. of South Carolina (United States)
Remis Gaska, Sensor Electronic Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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