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Proceedings Paper

MOCVD-grown InAs/GaAs quantum dots
Author(s): Diana L. Huffaker; S. Birudavolu
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Paper Abstract

We discuss a growth technique for producing a high quality quantum dot (QD) ensemble that has both high QD density and low defect density. The growth conditions under which the QDs nucleate, are optimized to form high density QDs with few defects, however, it is very difficult to prevent coalescence completely. Pausing the AsH3 flow for a few seconds after nucleation allows surface adatoms to migrate from poly-crystalline defect sites where the bond strengths are weak to crystalline QD sites. We will discuss statistical analysis based on atomic force microscope (AFM) images, high-resolution transmission electron microscopy (HRTEM), and electroluminescence (EL) to characterize the effects of AsH3 pauses on the QD density and crystallographic shape. Ground state PL from capped QDs is measured at 1.38 μm with a 40 meV linewidth. We demonstrate lasing from the first excited state under room-temperature pulsed characteristics.

Paper Details

Date Published: 1 July 2003
PDF: 8 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.488041
Show Author Affiliations
Diana L. Huffaker, Univ. of New Mexico (United States)
S. Birudavolu, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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