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Proceedings Paper

ORION semiconductor optical detectors: research and development
Author(s): Vladimir T. Khryapov; Vladimir P. Ponomarenko; V. G. Butkevitch; Igor I. Taubkin; Vitaly I. Stafeev; Sergey A. Popov; Vladimir V. Osipov
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Paper Abstract

Experimental and theoretical results of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for visual far infrared spectral range are presented. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, AIIIBV compounds, and CMT structures are described.

Paper Details

Date Published: 1 December 1991
PDF: 12 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48789
Show Author Affiliations
Vladimir T. Khryapov, Research, Development, and Production Ctr. ORION (Russia)
Vladimir P. Ponomarenko, Research, Development, and Production Ctr. ORION (Russia)
V. G. Butkevitch, Research, Development, and Production Ctr. ORION (Russia)
Igor I. Taubkin, Research, Development, and Production Ctr. ORION (Russia)
Vitaly I. Stafeev, Research, Development, and Production Ctr. ORION (Russia)
Sergey A. Popov, Research, Development, and Production Ctr. ORION (Russia)
Vladimir V. Osipov, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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