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Proceedings Paper

Microstructures of defects causing noise in MOS devices
Author(s): Daniel M. Fleetwood
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Paper Abstract

The low-frequency excess (1/f) noise of metal-oxide-semiconductor (MOS) devices has long been known to depend strongly on defects at or near the Si/SiO2 interface. We discuss several defect microstructures for oxygen-vacancy-related defects that are found via density functional theory to have energy levels consistent with 1/f noise. These include two variations of the so-called Eγ' center, one of which includes a fivefold coordinated, puckered Si atom. A stretched dimer O vacancy defect ( the Eδ') is also found to potentially cause MOS 1/f noise. These defects appear to be sufficient to describe much of the noise in many kinds of nMOS and pMOS transistors. However, pMOS transistors that show latent interface-trap buildup and/or buried channel conduction may present a special challenge for these or otehr noise models. O-vacancy-related and hydrogen-related defects that cause 1/f noise in larger devices will cause other kinds of performance and reliability problems in highly scaled devices, such as random telegraph noise, enhanced tunnel current, stress or radiation induced leakage current, and/or dielectric breakdown.

Paper Details

Date Published: 9 May 2003
PDF: 12 pages
Proc. SPIE 5112, Noise as a Tool for Studying Materials, (9 May 2003); doi: 10.1117/12.487868
Show Author Affiliations
Daniel M. Fleetwood, Vanderbilt Univ. (United States)


Published in SPIE Proceedings Vol. 5112:
Noise as a Tool for Studying Materials
Michael B. Weissman; Nathan E. Israeloff; A. Shulim Kogan, Editor(s)

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