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Proceedings Paper

Extendibility of chemically amplified resists: another brick wall?
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Paper Abstract

The chemically amplified resist concept, first described two decades past and originally targeted for the 1000 nm device generation, has proved to have remarkable versatility. The semiconductor industry has come to rely on the properties of CA resists to achieve high resolution, high aspect ratio imaging accompanied by the high throughput that stems from their catalytic imaging mechanism. As the industry maps the evolution of lithographic technology to the 20 nm regime, it is appropriate to review the factors that control the performance of CA resists, and examine whether the traditional evolutionary path of materials refinement will provide materials capable of supporting device manufacturing at those dimensions. The impacts of image blur, line-edge roughness and shot noise on the ability to image CA resists at nanoscale dimensions will be discussed.

Paper Details

Date Published: 12 June 2003
PDF: 14 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.487739
Show Author Affiliations
William D. Hinsberg, IBM Almaden Research Ctr. (United States)
Frances A. Houle, IBM Almaden Research Ctr. (United States)
Martha I. Sanchez, IBM Almaden Research Ctr. (United States)
John A. Hoffnagle, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)
Gregg M. Gallatin, IBM Thomas J. Watson Research Ctr. (United States)
Jonathan L. Cobb, Motorola Digital DNA Labs. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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