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Proceedings Paper

Resist requirements in the era of resolution enhancement techniques
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Paper Abstract

At the heart of the tremendous advances of optical microlithography are the resists and the people who drove them to ever higher performance. In 1980, a resist could image reliably around a k1 of 1.0 to 0.8. Today without any other extreme RET, resists with anti-reflection coatings production imaging has extended resolution to 0.6 to 0.45 k1, effectively doubling the NA of the integrated imaging system. The manipulation of the interrelationships of the physics and chemistry of the imaging process has made this possible. History shows that resists must be designed to best utilize the image being formed in them and that a resist designed for one application may not work for another. This holds true for resolution enhancement techniques as well, for example the quality and brightness of a weak phase-shifted contacts depends on the strength of a side lobe, however, if the side lobe is too bright it will print unless the resist is modified not to print it. Also as technology moves to smaller features severe proximity effects make it necessary to adjust resist performance to compensate for these effects. In this discussion we concentrate our discussion to the physical chemical effects that makes it possible to extend resolution using resolution enhancement techniques. We will concentrate on energy coupling into the film with high NA imaging at the diffraction limit, the reaction-diffusion reaction and the impact of acid and base diffusion in chemically amplified resists.

Paper Details

Date Published: 12 June 2003
PDF: 7 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.487728
Show Author Affiliations
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
Jeffrey D. Byers, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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