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Proceedings Paper

Resist cracking and adhesion improvement
Author(s): Il-Ho Lee; Jin-Seo Lee; Kwan-Yul Lee; Chun-Geun Park; Jae-Sung Choi; Jeong Lee
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Paper Abstract

The resist cracking phenomenon in hole pattern on TEOS oxide has been investigated widely. We found from various tests that the root cause is just poor adhesion between resist and TEOS oxide and better adhesion process can skip additional process like a plasma treatment to avoid resist cracking. In this work, we show the relations between adhesion and prime process and finally suggest the way to improve adhesion, which will be more critical to lithography process below 130nm because of easier pattern collapse due to high aspect ratio and narrow width.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.487726
Show Author Affiliations
Il-Ho Lee, Anam Semiconductor Inc. (South Korea)
Jin-Seo Lee, Anam Semiconductor Inc. (South Korea)
Kwan-Yul Lee, Anam Semiconductor Inc. (South Korea)
Chun-Geun Park, Shipley Far East Ltd. (Japan)
Jae-Sung Choi, Anam Semiconductor Inc. (South Korea)
Jeong Lee, Anam Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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