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Proceedings Paper

Current status of InGaAs detector arrays for 1-3 um
Author(s): Gregory H. Olsen; Abhay M. Joshi; Vladimir S. Ban
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Paper Abstract

In(x)Ga(1-x)As detector linear arrays with 256 and 512 elements have been made for the 1.0-1.7 micron spectrum (x = 0.53) and 1.4-2.6 microns (x = 0.8) with 30 x 30, 30 x 100, and 25 x 500 micron pixel sizes. Room temperature D* values beyond 1 x 10 exp 13 W/cm-sq rt Hz (at 1.7 micron) and 1 x 10 exp 11 W/cm-sq rt Hz (at 2.5 microns) are reported. A 128 x 128 element In(0.53)Ga(0.47)As detector array with less than 1 percent dropouts is also described. High reliability is also reported for these arrays. Future improvements needed include lower-noise multiplexers and the use of zero-bias multiplexers.

Paper Details

Date Published: 1 December 1991
PDF: 10 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48765
Show Author Affiliations
Gregory H. Olsen, EPITAXX, Inc. (United States)
Abhay M. Joshi, EPITAXX, Inc. (United States)
Vladimir S. Ban, EPITAXX, Inc. (United States)


Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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