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Proceedings Paper

Long-wavelength GexSi1-x/Si heterojunction infrared detectors and focal-plane arrays
Author(s): Bor-Yeu Tsaur; Chenson K. Chen; Susanne A. Marino
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Paper Abstract

Heterojunction GexSi1-x/Si internal-photoemission infrared detectors exhibiting nearly ideal thermionic-emission dark-current characteristics have been fabricated with cutoff wavelengths out to 25 micrometers . Heteroepitaxial p-GexSi1-x layers, degenerately doped with boron to concentrations exceeding 1020 cm-3 in order to obtain high free-carrier absorption, are grown in Si substrates by molecular beam epitaxy. The detector cutoff wavelength, which is determined to first order by the valence- band offset, is tailored by varying the composition of the GexSi1-x layer and can be fine tuned by adjusting such parameters as the doping concentration and growth temperature. High-quality imaging without uniformity correction has been demonstrated in the long-wavelength infrared spectral band for 400 X 400- and 320 X 244-element focal plane arrays consisting of GexSi1-x/Si detectors, which have cutoff wavelengths of 9.3 and 10.5 micrometers , respectively, and monolithic CCD readout circuitry.

Paper Details

Date Published: 1 December 1991
PDF: 16 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48764
Show Author Affiliations
Bor-Yeu Tsaur, Lincoln Lab./MIT (United States)
Chenson K. Chen, Lincoln Lab./MIT (United States)
Susanne A. Marino, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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