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Proceedings Paper

Advanced process control for polysilicon gate etching using integrated optical CD metrology
Author(s): Gowri P. Kota; Jorge Luque; Vahid Vahedi; Ashok Khathuria; Thaddeus G. Dziura; Ady Levy
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Paper Abstract

Advanced integrated metrology capability is actively being pursued in several process areas, including etch, to shorten process cycle times, enable wafer-level advanced process control (APC), and improve productivity. In this study, KLA-Tencor's scatterometry-based iSpectra Spectroscopic CD was integrated on a Lam 2300 Versys Star silicon etch system. Feed-forward control techniques were used to reduce critical dimension (CD) variation. Pre-etch CD measurements were sent to the etch system to modify the trim time and achieve targeted CDs. CDs were brought to within 1 nm from a starting CD spread of 25 nm, showing the effectiveness of this process control approach together with the advantages of spectroscopic CD metrology over conventional CD measurement techniques.

Paper Details

Date Published: 1 July 2003
PDF: 7 pages
Proc. SPIE 5044, Advanced Process Control and Automation, (1 July 2003); doi: 10.1117/12.487635
Show Author Affiliations
Gowri P. Kota, Lam Research Corp. (United States)
Jorge Luque, Lam Research Corp. (United States)
Vahid Vahedi, Lam Research Corp. (United States)
Ashok Khathuria, Advanced Micro Devices, Inc. (United States)
Thaddeus G. Dziura, KLA-Tencor Corp. (United States)
Ady Levy, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5044:
Advanced Process Control and Automation
Matt Hankinson; Christopher P. Ausschnitt, Editor(s)

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