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Proceedings Paper

193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process
Author(s): John E. Ferri; Marco Vieira; Mario Reybrouck; Martin E. Mastovich; Scott Bowdoin; Robert Brandom; Paul C. Knutrud
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Paper Abstract

A preponderance of critical levels for the 90-nanometer (nm) process technology node utilize 193 nm lithography. The resist systems used in this processing show a much higher sensitivity to line width slimming at the traditional electron beam energies encountered in Critical Dimension Scanning Electron Microscope (CD SEM) metrology than do previous generations of chemically amplified resists. The uncertainty that results from this undesirable interaction can consume more than the entire process control budget for advanced devices. This paper reports measurements of resist CD uniformity taken with a new CD SEM metrology technology based on ultra low voltage, that significantly reduces the impact of the electron beam on 193 nm resist systems. Over the past several months this technology has been used for 193 nm resist development studies at ARCH Chemicals. Several examples, demonstrating the effectiveness of this new technology using the Yosemite Ultra Low voltage CD SEM will be presented and contrasted against results obtained at higher voltages.

Paper Details

Date Published: 2 June 2003
PDF: 10 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.487597
Show Author Affiliations
John E. Ferri, Arch Chemicals, Inc. (United States)
Marco Vieira, Arch Chemicals, Inc. (United States)
Mario Reybrouck, Arch Chemicals, Inc. (Belgium)
Martin E. Mastovich, Schlumberger Ltd. (United States)
Scott Bowdoin, Schlumberger Ltd. (United States)
Robert Brandom, Schlumberger Ltd. (United States)
Paul C. Knutrud, Schlumberger Ltd. (United States)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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