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Proceedings Paper

High-speed photocathode gating for generation III image intensifier applications
Author(s): Joseph P. Estrera; Michael Saldana
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Paper Abstract

Generation III image intensifiers, employing gallium arsenide (GaAs)photocathodes, enable high speed gating into sub-nanosecond range. By utilizing high speed gating techniques, a number of important applications are realized in military rugged ground and aviation applications. Recent advancements toward size, weight, and power reduction of gated I2-based systems have have expanded the scope of applicability of these gating techniques into the battery-powered portable platforms. We present a survey of applications that are expanding from military to commercial applications as high speed gated power supply advancements are realized in the industry.

Paper Details

Date Published: 8 September 2003
PDF: 10 pages
Proc. SPIE 5079, Helmet- and Head-Mounted Displays VIII: Technologies and Applications, (8 September 2003); doi: 10.1117/12.487589
Show Author Affiliations
Joseph P. Estrera, Northrop Grumman Corp. (United States)
Michael Saldana, Northrop Grumman Corp. (United States)

Published in SPIE Proceedings Vol. 5079:
Helmet- and Head-Mounted Displays VIII: Technologies and Applications
Clarence E. Rash; Colin E. Reese, Editor(s)

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