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Proceedings Paper

High-fill-factor monolithic infrared image sensor
Author(s): Masafumi Kimata; Naoki Yutani; Hirofumi Yagi; Junji Nakanishi; Natsuro Tsubouchi; Toshiki Seto
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Paper Abstract

A 256 X 256 element platinum silicide monolithic image sensor with a large fill factor has been developed as a high sensitivity infrared image sensor. It is essential to increase the maximum signal charge of the staring infrared image sensor to obtain higher sensitivity. We used the Charge Sweep Device readout architecture and improved operations of the floating diffusion amplifier to increase the maximum signal charge. A 52 X 40 micrometers 2 pixel using a minimum features size of 2 micrometers has a fill factor of 66%. Evaluating the performance of the device, we confirmed the effectiveness of the improved technologies. The measured saturation level is 2.8 X 106 electrons which is determined by the storage capacity of the detector. We estimated from a measurement point at low background temperature that the noise equivalent temperature difference with a f/1.2 optics is 0.036 K at 300 K background.

Paper Details

Date Published: 1 December 1991
PDF: 12 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48743
Show Author Affiliations
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Naoki Yutani, Mitsubishi Electric Corp. (Japan)
Hirofumi Yagi, Mitsubishi Electric Corp. (Japan)
Junji Nakanishi, Mitsubishi Electric Corp. (Japan)
Natsuro Tsubouchi, Mitsubishi Electric Corp. (Japan)
Toshiki Seto, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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