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Proceedings Paper

Infrared techniques applied to large solar arrays: a ten-year update
Author(s): James R. Hodor; Herman J. Decker; Jesus J. Barney
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Paper Abstract

The use of IR technology for solar cell crack detection in the manufacture and inspection of large solar arrays is reviewed. It is concluded that silicon CCD technology was used to develop IR technology for GaAs-on-GaAs at 1.0 micron, and PtSi technology was used to develop GaAs-on-Ge IR technology at 2-2.5 microns. IR crack inspection for the thinner, etched silicon solar cells of large, flexible solar wings was developed to visualize their cracks, because the surfaces of these cells were pitted.

Paper Details

Date Published: 1 December 1991
PDF: 7 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48737
Show Author Affiliations
James R. Hodor, Lockheed Missiles & Space Co., Inc. (United States)
Herman J. Decker, Lockheed Missiles & Space Co., Inc. (United States)
Jesus J. Barney, Lockheed Missiles & Space Co., Inc. (United States)

Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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