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Proceedings Paper

Advanced Si IR detectors using molecular beam epitaxy
Author(s): True Lon Lin; Eric W. Jones; Thomas George; Alexander Ksendzov; M. L. Huberman
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Paper Abstract

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Paper Details

Date Published: 1 December 1991
PDF: 5 pages
Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48722
Show Author Affiliations
True Lon Lin, Jet Propulsion Lab. (United States)
Eric W. Jones, Jet Propulsion Lab. (United States)
Thomas George, Jet Propulsion Lab. (United States)
Alexander Ksendzov, Jet Propulsion Lab. (United States)
M. L. Huberman, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 1540:
Infrared Technology XVII
Bjorn F. Andresen; Marija Scholl; Irving J. Spiro, Editor(s)

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