Share Email Print

Proceedings Paper

Ab initio molecular orbital characterization of some sources for laser-assisted radical beam epitaxy of group-III nitrides
Author(s): Takuo Kanayama; Toyohiro Shimizu; Hideki Kojima; Noriyoshi Omote; Sho Sunouchi; Keiji Hayashi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Ab initio molecular orbital methods were applied to screening tests of the organometallic source materials suitable for the photo-assisted low-temperature growth of stoichiometric epitaxial films of group-III nitrides. The molecular properties of dimethylgalliumnitrene ((CH3)2GaN), dimethylaluminumnitrene ((CH3)2AIN), and dimethylboronnitrene ((CH3)2BN) were examined in terms of the stability and the reactivity. Also clarified were the photolytic and the pyrolytic decomposition mechanisms of the corresponding azides. Based on these theoretical analyses, we confirmed the applicability of beams of (CH3)2GaN and (CH3)2AIN produced by the method of photo-dissociation of energetic compound beams to the epitaxial growth.

Paper Details

Date Published: 19 February 2003
PDF: 5 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486579
Show Author Affiliations
Takuo Kanayama, Kanazawa Institute of Technology (Japan)
Toyohiro Shimizu, Kanazawa Institute of Technology (Japan)
Hideki Kojima, Kanazawa Institute of Technology (Japan)
Noriyoshi Omote, Kanazawa Institute of Technology (Japan)
Sho Sunouchi, Kanazawa Institute of Technology (Japan)
Keiji Hayashi, Kanazawa Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

© SPIE. Terms of Use
Back to Top