Share Email Print
cover

Proceedings Paper

Laser ablation of GaN/sapphire structure for LED
Author(s): Hwee Ming Lam; MingHui Hong; Shu Yuan; Tow Chong Chong
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Laser ablation of GaN thin film and GaN/Sapphire structure for the application o flight emitting diodes (LEDs) has been performed. Edge quality and surface roughness of the specimens are compared using scanning electron microscopy (SEM) and atomic force microscopy (AFM) after laser processing by the 3rd harmonic Nd:YAG laser, KrF excimer laser and Ti-sapphire femtosecond laser. Dependence of laser ablation rate on the processing parameters, such as laser fluence, scanning speed and pulse repetition rate with the laser irradiation is also investigated. Device characteristics of the specimens after the laser microprocessing are also analyzed.

Paper Details

Date Published: 19 February 2003
PDF: 5 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486561
Show Author Affiliations
Hwee Ming Lam, Data Storage Institute/National Univ. of Singapore (Singapore)
MingHui Hong, Data Storage Institute/National Univ. of Singapore (Singapore)
Shu Yuan, Nanyang Technological Univ. (Singapore)
Tow Chong Chong, Data Storage Institute/National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

© SPIE. Terms of Use
Back to Top