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Proceedings Paper

Thermal stimulation of laser processing of Si
Author(s): Naotada Okada; Ryuichi Togawa
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Paper Abstract

Transient transmitted power through thin Si substrate (0.35 mm) irradiated with pulsed SHG-(532 nm) and fundamental (1064 nm) Nd:YAG lasers has been calculated to simulate laser marking process using FEM (finite element method). Dependence of attenuation factor on temperature and wavelength is considered. Fraction of transmitted power with a fundamental Nd:YAG laser drastically decreases by irradiation with three pulses from 40% to 5%, while the transmitted power with an SHG-Nd:YAG laser is negligible over the pulses.

Paper Details

Date Published: 19 February 2003
PDF: 4 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486554
Show Author Affiliations
Naotada Okada, Toshiba Corp. (Japan)
Ryuichi Togawa, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

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