Share Email Print

Proceedings Paper

Thermal stimulation of laser processing of Si
Author(s): Naotada Okada; Ryuichi Togawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Transient transmitted power through thin Si substrate (0.35 mm) irradiated with pulsed SHG-(532 nm) and fundamental (1064 nm) Nd:YAG lasers has been calculated to simulate laser marking process using FEM (finite element method). Dependence of attenuation factor on temperature and wavelength is considered. Fraction of transmitted power with a fundamental Nd:YAG laser drastically decreases by irradiation with three pulses from 40% to 5%, while the transmitted power with an SHG-Nd:YAG laser is negligible over the pulses.

Paper Details

Date Published: 19 February 2003
PDF: 4 pages
Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); doi: 10.1117/12.486554
Show Author Affiliations
Naotada Okada, Toshiba Corp. (Japan)
Ryuichi Togawa, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 4830:
Third International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Kojiro F. Kobayashi; Koji Sugioka; Reinhart Poprawe; Henry Helvajian, Editor(s)

© SPIE. Terms of Use
Back to Top