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Proceedings Paper

InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging
Author(s): John Christopher Dries; Tara Martin; Wei Huang; Michael J. Lange; Marshall J. Cohen
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Paper Abstract

We report on recent progress in developing 2-dimensional arrays of InGaAs/InP avalanche photodiodes. Advances in compound semiconductor epitaxy and device processing technologies enable large (128x128) element focal plane arrays with breakdown voltage standard deviations < 0.3%. The uniformity in breakdown voltage simplifies readout integrated circuit designs, in that a single bias voltage may be used for all elements in the array. Each element in the array achieves responsivities greater than 10 A/W at a wavelength of 1550 nm, while maintaining dark currents less than 20 nA. The APD arrays stand to enable new cameras for such applications as three-dimensional imaging, and various other laser radar and communications systems. In particular, the improved responsivity of avalanche photodiodes over their pin photodiode counterparts can improve sensitivities by as much as 6 - 10 dB depending upon the readout integrated circuit bandwidth. So-called "flash" laser radar systems wherein a single high energy laser pulse is used to image a target require the extra sensitivity afforded by avalanche photodiodes due to the low return photon count from distant targets.

Paper Details

Date Published: 10 October 2003
PDF: 7 pages
Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.486325
Show Author Affiliations
John Christopher Dries, Sensors Unlimited, Inc. (United States)
Tara Martin, Sensors Unlimited, Inc. (United States)
Wei Huang, Sensors Unlimited, Inc. (United States)
Michael J. Lange, Sensors Unlimited, Inc. (United States)
Marshall J. Cohen, Sensors Unlimited, Inc. (United States)


Published in SPIE Proceedings Vol. 5074:
Infrared Technology and Applications XXIX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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