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Proceedings Paper

Noise and charge transport in polymer thin film structures
Author(s): Ognian Marinov; M. Jamal Deen; J. Yu; G. Vamvounis; Steven Holdcroft; W. Woods
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Paper Abstract

The low frequency noise (LFN) properties of the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET’s (PFET’s) channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.

Paper Details

Date Published: 12 May 2003
PDF: 12 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.485990
Show Author Affiliations
Ognian Marinov, McMaster Univ. (Canada)
M. Jamal Deen, McMaster Univ. (Canada)
J. Yu, Simon Fraser Univ. (Canada)
G. Vamvounis, Simon Fraser Univ. (Canada)
Steven Holdcroft, Simon Fraser Univ. (Canada)
W. Woods, Simon Fraser Univ. (Canada)

Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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