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Proceedings Paper

Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers
Author(s): E. W. Nelson; M. V. Dolguikh; E. S. Flitsiyan; A. V. Muravjov; R. E. Peale; S. H. Kleckley; W. G. Vernetson; V. Z. Tsipin
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Paper Abstract

A neutron transmutation doped (NTD) far-infrared p-Ge laser crystal and a melt-grown p-Ge laser are analyzed and compared. Though the doping level in the NTD active crystal is twice lower than optimal, the laser performance is comparable to that produced from high-quality melt-grown crystals because of superior dopant uniformity. Compensation was examined by comparing results of neutron activation analysis with majority carrier concentration. Study of impurity breakdown electric field reveals better crystal quality in NTD. The current saturation behavior confirms the expected higher doping uniformity over melt grown laser rods.

Paper Details

Date Published: 21 August 2003
PDF: 8 pages
Proc. SPIE 5087, Laser Systems Technology, (21 August 2003); doi: 10.1117/12.485798
Show Author Affiliations
E. W. Nelson, Univ. of Central Florida (United States)
M. V. Dolguikh, Univ. of Central Florida (United States)
E. S. Flitsiyan, Univ. of Central Florida (United States)
A. V. Muravjov, Univ. of Central Florida (United States)
R. E. Peale, Univ. of Central Florida (United States)
S. H. Kleckley, Zaubertek, Inc. (United States)
W. G. Vernetson, Univ. of Florida (United States)
V. Z. Tsipin, Uzbekistan Academy of Science (Uzbekistan)

Published in SPIE Proceedings Vol. 5087:
Laser Systems Technology
William E. Thompson; Paul H. Merritt, Editor(s)

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