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Proceedings Paper

UV-visible sensors based on polymorphous silicon
Author(s): Cyril S. Guedj; Pere Roca i Cabarrocas; Nicolas Massoni; Norbert Moussy; Damien Morel; Svetoslav Tchakarov; Yvan Bonnassieux
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Paper Abstract

UV-based imaging systems can be used for low-altitude rockets detection or biological agents identification (for instance weapons containing ANTHRAX). Compared to conventional CCD technology, CMOS-based active pixel sensors provide several advantages, including excellent electro-optical performances, high integration, low voltage operation, low power consumption, low cost, long lifetime, and robustness against environment. The monolithic integration of UV, visible and infrared detectors on the same uncooled CMOS smart system would therefore represent a major advance in the combat field, for characterization and representation of targets and backgrounds. In this approach, we have recently developped a novel technology using polymorphous silicon. This new material, fully compatible with above-IC silicon technology, is made of nanometric size ordered domains embedded in an amorphous matrix. The typical quantum efficiency of detectors made of this nano-material reach up to 80 % at 550 nm and 30 % in the UV range, depending of the design and the growth parameters. Furthermore, a record dark current of 20 pA/cm2 at −3 V has been reached. In addition, this new generation of sensors is significantly faster and more stable than their amorphous silicon counterparts. In this paper, we will present the relationship between the sensor technology and the overall performances.

Paper Details

Date Published: 5 September 2003
PDF: 8 pages
Proc. SPIE 5075, Targets and Backgrounds IX: Characterization and Representation, (5 September 2003); doi: 10.1117/12.485767
Show Author Affiliations
Cyril S. Guedj, CEA-LETI (France)
Pere Roca i Cabarrocas, LPICM, CNRS/Ecole Polytechnique (France)
Nicolas Massoni, CEA-LETI (France)
Norbert Moussy, CEA-LETI (France)
Damien Morel, CEA-LETI (France)
Svetoslav Tchakarov, LPICM, CNRS/Ecole Polytechnique (France)
Yvan Bonnassieux, LPICM, CNRS/Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 5075:
Targets and Backgrounds IX: Characterization and Representation
Wendell R. Watkins; Dieter Clement; William R. Reynolds, Editor(s)

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