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Proceedings Paper

Confocal photoluminescence method for measuring the carrier migration in structures with quantum dots
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Paper Abstract

The migration of carriers in optically pumped semiconductor structures with quantum dots is investigated using a confocal setup. Experiments are performed in order to test the performances of the optical setup. The samples studied by optical confocal microscopy are the following: semi-insulating GaAs, InAs quantum dots grown directly in GaAs, InAs quantum dots grown inside a Ga0.85In0.15As quantum well and a Ga0.85In0.15As quantum well with GaAs barriers. Measurements are done in a range of temperatures starting from 78 K up to 295 K. A theoretical model for the migration length is presented. The solution of a diffusion-type equation is used to fit the experimental data.

Paper Details

Date Published: 1 July 2003
PDF: 12 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.485707
Show Author Affiliations
Dan Paul Popescu, CHTM/Univ. of New Mexico (United States)
Petr Georgievich Eliseev, CHTM/Univ. of New Mexico (United States)
Kevin J. Malloy, CHTM/Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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