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Proceedings Paper

Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures
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Paper Abstract

A theoretical model for the dependence on temperature of the carrier behavior in a semiconductor structure containing InAs quantum dots grown inside a Ga0.85In0.15As quantum well is presented. The conditions, that have to be imposed in order to obtain analytical solutions with obvious physical interpretation are kept to minimum. Two temperature domains are approached in this model. In the low temperature case the equation system that describes the carrier behavior can be reduced to a cubic equation. One of the solutions of the equation represents the quantum dot photoluminescence yield. Also, a solution is obtained for the dot emission yield in the high temperature domain, where the carrier thermal escape from dots cannot be neglected. The solution depends, on the probabilities for electron and hole capture and reemission, and on the number of dot states occupied by electrons and holes. Temperature dependent measurements of the quantum dot photoluminescence are performed and the results are fit with the theoretical model.

Paper Details

Date Published: 1 July 2003
PDF: 11 pages
Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); doi: 10.1117/12.485706
Show Author Affiliations
Dan Paul Popescu, Univ. of New Mexico (United States)
Petr Georgievich Eliseev, Univ. of New Mexico (United States)
Andreas Stintz, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4999:
Quantum Sensing: Evolution and Revolution from Past to Future
Manijeh Razeghi; Gail J. Brown, Editor(s)

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