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Proceedings Paper

Composite readouts with TDI and dead elements deselection
Author(s): Fiodor F. Sizov; Vladimir P. Reva; Yuri P. Derkach; Alexandr G. Golenkov; Vyacheslav V. Zabudsky; Sergey V. Korinets
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Paper Abstract

For 288x4 mercury-cadmium telluride (MCT) diode array silicon readouts with deselection function, the "composite" technology approach, which simplifies the technology of their manufacturing, is considered. Both technology of n-channel CCD devices and the CMOS technology are applied, which allow to weaken considerably the technological requirements for realization of 288x4 readouts with deselection of "dead" elements (generally the 0.8 micron design rules technology is applied). It is shown that the design rules 2.5 μm for CCD technology and 2.0 design rules for CMOS technology are sufficient to realize most of functions needed for 288x4 MCT array design and manufacture. All analog functions (including TDI as the most complex function for realization in CMOS basis) are realized by CCD elements. Four-phase TDI register was realized using semi-buried channel by phosphorus ion implantation. An amplification of the output signals is realized by CMOS buffer amplifier. Decoding and deselection code storing functions are realized by digital CMOS elements. The parameters of the 288x4 silicon readout device: direct injection input circuits, 4 elements TDI function, 4 outputs; 4 MHz maximum information output frequency; 2 MHz maximum clock frequency; 3 V swing output voltage; not less than 1.6 pC maximum charge capacity per each input; 3.0 pC maximum charge capacity at multiplexor input; 75 dB dynamic band; 28 output pins.

Paper Details

Date Published: 10 October 2003
PDF: 7 pages
Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.485680
Show Author Affiliations
Fiodor F. Sizov, Institute of Semiconductor Physics (Ukraine)
Vladimir P. Reva, Institute of Semiconductor Physics (Ukraine)
Yuri P. Derkach, Institute of Semiconductor Physics (Ukraine)
Alexandr G. Golenkov, Institute of Semiconductor Physics (Ukraine)
Vyacheslav V. Zabudsky, Institute of Semiconductor Physics (Ukraine)
Sergey V. Korinets, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5074:
Infrared Technology and Applications XXIX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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