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Proceedings Paper

Extremely high breakdown voltage in high-brightness InGaN LEDs
Author(s): K. R. Wang; S. C. Huang; M. F. Yeh; Y. T. Chung; Y. W. Chang; C. J. Sun; C. T. Chung; Chuong A. Tran
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Paper Abstract

High-brightness InGaN light emitting diodes (LEDs) with an output power of 2.7, 2.3, and 1.8 mW at a driving current of 20 mA for the emitting wavelength of 470, 505, and 525 nm, respectively, were realized using metalorganic vapor phase epitaxy. The I-V characteristic of these devices experiences a reverse-bias voltage higher than 60 V for a leak current of 10 μA. We find out that the dislocation density in the n-GaN layer is crucial to achieve such high breakdown voltage. By varying growth parameters, we can tune the breakdown voltage from 10 V to 60 V.

Paper Details

Date Published: 3 July 2003
PDF: 5 pages
Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); doi: 10.1117/12.485631
Show Author Affiliations
K. R. Wang, Highlink Technology Corp. (Taiwan)
S. C. Huang, Highlink Technology Corp. (Taiwan)
M. F. Yeh, Highlink Technology Corp. (Taiwan)
Y. T. Chung, Highlink Technology Corp. (Taiwan)
Y. W. Chang, Highlink Technology Corp. (Taiwan)
C. J. Sun, Highlink Technology Corp. (Taiwan)
C. T. Chung, Opto Tech Corp. (Taiwan)
Chuong A. Tran, Highlink Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 4996:
Light-Emitting Diodes: Research, Manufacturing, and Applications VII
E. Fred Schubert; Kurt J. Linden; H. Walter Yao; Daniel J. McGraw, Editor(s)

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