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Proceedings Paper

Lithographic flare measurements of EUV full-field projection optics
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Paper Abstract

We demonstrate direct flare measurements of 4-mirror projection optics in the Engineering Test Stand (ETS) using a conventional resist clearing method (the Kirk method). Two extreme UV lithographic projection optics, one with higher flare than the other, have been characterized and the results compared. The measured results have also been compared to analytical calculations based on measured mirror roughness and the extended point spread function. Full-field flare across the 24 mm field width has been measured, and we have verified that flare is constant across the field for EUV lithography as predicted. Horizontal (H) and vertical (V) flare bias has been observed and the cause of the H-V flare bias has been investigated. The main cause has been identified to be anisotropic mirror polishing. Simulations with the 2D Power Spectral density function have confirmed the experimental results.

Paper Details

Date Published: 16 June 2003
PDF: 9 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.485547
Show Author Affiliations
Sang Hun Lee, Intel Corp. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Christof Krautschik, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)
Henry Chapman, Lawrence Livermore National Lab. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
Michael Goldstein, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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