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Proceedings Paper

Full-level alternating PSM for sub-100nm DRAM gate patterning
Author(s): Rainer Pforr; Marco Ahrens; Wolfgang Dettmann; Mario Hennig; Roderick Koehle; Burkhard Ludwig; Nicolo Morgana; Joerg Thiele
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Paper Abstract

The lithographic potential of alternating PSM for sub-100nm gate patterning have been evaluated in comparison to alternative techniques. The status of the key elements of the full level alternating PSM approach including design conversion, optical proximity correction, mask making, double exposure and phase-shifting mask imaging will be demonstrated for a 256MDRAM device. Experimental data describing the phase-shifting mask quality, the lithographic process windows and the CD control obtained for alternating PSM in full level and array only approach will be presented.

Paper Details

Date Published: 26 June 2003
PDF: 12 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485521
Show Author Affiliations
Rainer Pforr, Infineon Technologies AG (Germany)
Marco Ahrens, Infineon Technologies AG (Germany)
Wolfgang Dettmann, Infineon Technologies AG (Germany)
Mario Hennig, Infineon Technologies AG (Germany)
Roderick Koehle, Infineon Technologies AG (Germany)
Burkhard Ludwig, Infineon Technologies AG (Germany)
Nicolo Morgana, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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