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Proceedings Paper

Process, design, and optical proximity correction requirements for the 65nm device generation
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Paper Abstract

The 65nm device generation will require steady improvements in lithography scanners, resists, reticles and OPC technology. 193nm high NA scanners and illumination can provide the desired dense feature resolution, but achieving the stringent overall 65nm logic product requirements necessitates a more coherent strategy of reticle, process, OPC, and design methods than was required for previous generations. This required integrated patterning solution strategy will have a fundamental impact on the relationship between design and process functions at the 65nm device node.

Paper Details

Date Published: 26 June 2003
PDF: 12 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485498
Show Author Affiliations
Kevin Lucas, Motorola, Inc. (United States)
Patrick Montgomery, Motorola, Inc. (United States)
IMEC (Belgium)
Lloyd C. Litt, Motorola, Inc. (United States)
Will Conley, Motorola, Inc. (United States)
Sergei V. Postnikov, Motorola, Inc. (United States)
Wei Wu, Motorola, Inc. (United States)
Chi-Min Yuan, Motorola, Inc. (United States)
Marc Olivares, Motorola, Inc. (United States)
Kirk Strozewski, Motorola, Inc. (United States)
Russell L. Carter, Motorola, Inc. (United States)
James Vasek, Motorola, Inc. (United States)
David Smith, Motorola, Inc. (United States)
Eric L. Fanucchi, Motorola, Inc. (United States)
Vincent Wiaux, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Olivier Toublan, Mentor Graphics Corp. (France)
Arjan Verhappen, ASML (Netherlands)
Jan Pieter Kuijten, ASML (Netherlands)
Johannes van Wingerden, Philips Research Labs. (Belgium)
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Jeffrey W. Tracy, Photronics, Inc. (United States)
Christopher J. Progler, Photronics, Inc. (United States)
Eugene Shiro, Motorola, Inc. (Russia)
Igor Topouzov, Motorola, Inc. (Russia)
Karl Wimmer, Motorola, Inc. (France)
Bernard J. Roman, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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