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Proceedings Paper

Contact-hole MEEF comparison between ALTA and 50-KeV written masks
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Paper Abstract

Patterning of small contact holes has arisen as one of the principal challenges in all of semiconductor lithography. It has been established that the wafer print CD of a contact is related to the effective area of the contact hole on the mask, and that area MEEF values for 130 nm node contact holes utilizing 248 nm lithography can exceed 4.0. As such, there is strong motivation to ensure the best possible reticle level CD control. The move to 50KeV mask write processes has been accompanied by improvements in across reticle CD control. This paper will compare the wafer level printing performance, including area MEEF, for contact reticles written with 50KeV vector scan versus ALTA laser write tools. The results suggest that conventional mask specifications based upon a "CD" measurement are insufficient and that area based metrology is required.

Paper Details

Date Published: 26 June 2003
PDF: 7 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485494
Show Author Affiliations
John L. Sturtevant, Integrated Device Technology, Inc. (United States)
Juliann Opitz, Integrated Device Technology, Inc. (United States)
James C. Word, Integrated Device Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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