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Proceedings Paper

ArF issues of 90-nm-node DRAM device integration
Author(s): Doo-Hoon Goo; Byeong-Soo Kim; Joon-Soo Park; Kwang-Sub Yoon; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
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Paper Abstract

Recently, the design rule shrinkage of DRAM devices has been accelerated. According to International Technology Roadmap for Semiconductor (ITRS) 2001, 90 nm node will start in 2004. For this achievement, lithography has been standing especially in the forefront and leading the ultra fine patterning technologies in the manufacturing of semiconductor devices. We are now in the moment of transition from the stronghold of KrF to the prospective of ArF. In this paper, we applied ArF process to the real DRAM devices of 90nm node. We proved good pattern fidelity and device performance. The ArF process, however, has still some weak points - resist shrinkage and LER (Line Edge Roughness). Resist shrinkage is very crucial problem for measuring CD. To overcome it, we applied ASC (Anti-Shrinkage Coating) process to ArF resist and improved the CD measurement. LER also becomes an issue, as the design rule is shrink. It is found that they are very dependent on resist type. However, it could be cured effectively by VUV treatment. Finally we will mention the current status of low k1 factor and the future lithographic strategy of which technologies will be most feasible based on current situation.

Paper Details

Date Published: 26 June 2003
PDF: 8 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485473
Show Author Affiliations
Doo-Hoon Goo, Samsung Electronics Co., Ltd. (South Korea)
Byeong-Soo Kim, Samsung Electronics Co., Ltd. (South Korea)
Joon-Soo Park, Samsung Electronics Co., Ltd. (South Korea)
Kwang-Sub Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jung-Hyeon Lee, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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