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Proceedings Paper

Feasibility evaluations of alternating phase-shift mask for imaging sub-80-nm feature with KrF
Author(s): Myung-Ah Kang; Sung-Hyuck Kim; In-Kyun Shin; Seong-Woon Choi; Jung-Min Sohn
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Paper Abstract

Alternating phase shift mask (AltPSM) is considered as one of the most promising technique in leading-edge lithography. Its optical performance can be verified by sub-100nm gate generation and guaranteed device properties, indicated as depth of focus (DOF) and on chip CD variation (OCV). Nevertheless, continuous gate reduction in logic device demands more high-qualified mask process and optimization of illumination to overcome resolution limit. As one of the solution, appropriate mask structure and OPC rule dependent on illumination condition are evaluated. Issues out of mask manufacturing and Cr-less PEPSM as substitution of PEPSM are also discussed. Besides, interrelation between issues of mask and optical characteristics are investigated and compared mutually. In the end of this paper, we propose the optimum mask type and opportune time for ArF lithography.

Paper Details

Date Published: 26 June 2003
PDF: 10 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485430
Show Author Affiliations
Myung-Ah Kang, Samsung Electronics Co., Ltd. (South Korea)
Sung-Hyuck Kim, Samsung Electronics Co., Ltd. (South Korea)
In-Kyun Shin, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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