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Proceedings Paper

Extending ArF to the 65-nm node with full-phase lithography
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Paper Abstract

Experimental lithographic data are presented that show that ArF can comfortably be extended to the 65-nm node. All features in the designs were patterned with alternating phase-shift lithography according to the Full-Phase methodology without any form of optical proximity corrections. Process windows through-pitch, latitude trade-off curves, CD uniformity and pitch linearity are presented. Furthermore, the emphasis is on 2-dimensional design performance for 60, 70 and 80-nm node designs at k1 values as low as 0.28. The current ArF infrastructure for mask making, step-and-scan systems, and resist technology was used for this.

Paper Details

Date Published: 26 June 2003
PDF: 12 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485426
Show Author Affiliations
Frank A.J.M. Driessen, Numerical Technologies, Inc. (United States)
Christophe Pierrat, Numerical Technologies, Inc. (United States)
Geert Vandenberghe, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)
Paul van Adrichem, Numerical Technologies, Inc. (United States)
Hua-Yu Liu, Numerical Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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