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Proceedings Paper

Rigorous simulation of exposure over nonplanar wafers
Author(s): Andreas Erdmann; Christian K. Kalus; Thomas Schmoeller; Yewgenija Klyonova; Takashi Sato; Ayako Endo; Tsuyoshi Shibata; Yuuji Kobayashi
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Paper Abstract

Standard simulations of optical projection systems for lithography with scalar or vector methods of Fourier optics make the assumption that the wafer stack consists of homogeneous layers. We introduce a general scheme for the rigorous electromagnetic field (EMF) simulation of lithographic exposures over non-planar wafers. Rigorous EMF simulations are performed with the finite-difference time-domain (FDTD) method. The described method is used to simulate several typical scenarios for lithographic exposures over non-planar wafers. This includes the exposure of resist lines over a poly-Si line on the wafer with orthogonal orientation, the simulation of “classical” notch problems, and the simulation of lithographic exposures over wafers with defects.

Paper Details

Date Published: 26 June 2003
PDF: 11 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485390
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Christian K. Kalus, SIGMA-C GmbH (Germany)
Thomas Schmoeller, SIGMA-C GmbH (Germany)
Yewgenija Klyonova, SIGMA-C GmbH (Germany)
Takashi Sato, Toshiba Corp. (Japan)
Ayako Endo, Toshiba Corp. (Japan)
Tsuyoshi Shibata, Toshiba Corp (Japan)
Yuuji Kobayashi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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