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Proceedings Paper

Optical lithography solutions for sub-65-nm semiconductor devices
Author(s): Jan Mulkens; James A. McClay; Bruce A. Tirri; Martin Brunotte; Birgit Mecking; Hans Jasper
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Paper Abstract

In this paper we present a status update of the exposure tool developments for sub 65 nm CD’s. Main development path is 157-nm lithography. ASML follows a two step approach volume will be presented. Step 1 is based on the Micrascan step and scans platform and step 2 is based on the TWINSCAN platform. The progress of the development and first results on prototypes are discussed. This includes optics, purging, and pellicle status. The impact of CaF2 birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging is presented. The pellicle status is reviewed, and results of hard pellicle testing in KrF scanners are presented. For the Micrascan system, first imaging and overlay results are presented.

Paper Details

Date Published: 26 June 2003
PDF: 10 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485382
Show Author Affiliations
Jan Mulkens, ASML (Netherlands)
James A. McClay, ASML (United States)
Bruce A. Tirri, ASML (United States)
Martin Brunotte, Carl Zeiss SMT AG (Germany)
Birgit Mecking, Carl Zeiss SMT AG (Germany)
Hans Jasper, ASML (Netherlands)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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