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Proceedings Paper

Development of an organic bottom antireflective coating for 157-nm lithography
Author(s): Shigeo Irie; Masato Shigematsu; Seiro Miyoshi; Rikimaru Sakamoto; Kenichi Mizusawa; Yasuyuki Nakajima; Toshiro Itani
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Paper Abstract

In 157-nm lithography, an organic bottom-antireflective-coating (BARC), which has been mainly used as an antireflective technology in KrF or ArF lithography, is needed to reduce reflection from the substrate under the resist. To apply a conventional BARC to 157-nm lithography, the BARC thickness must be thinner than the BARC thickness used in KrF or ArF lithography. Because conventional BARCs have a lower dry-etching rate than resists with a fluorinated polymer for 157-nm lithography and the thickness of remaining resist after BARC dry-etching may be greatly reduced. Moreover, the substrate reflection under a conventional thin BARC cannot be completely controlled since the k-value of the extinction coefficient at a 157-nm wavelength is small. Therefore, a BARC material for 157-nm lithography must have a higher k-value at the 157-nm, a higher dry-etching rate than resists with a fluorinated polymer, good matching between the fluorinated resist and the BARC material to ensure a good resist pattern shape, and low outgassing from the BARC material. In this paper, we evaluate a newly developed BARC material (NCA646) for 157-nm lithography. We found that the k-value of this BARC material was 0.45 (1.8 times that of a conventional BARC (DUV30J; Brewer Science, Inc)), and the ratio of the dry-etching rate to that of a KrF resist was 1.53 (1.6 times that of DUV30J). These improvements were achieved by introducing a new chromophore into a BARC polymer of novolak resin. Furthermore, the amount of outgassing from the BARC material when irradiated by 157-nm light was close to 0 ng (irradiated condition; 100 mJ/cm2), and resist patterns with no footing were obtained with four kinds of fluorinated resist on this BARC material. We concluded that this BARC material was suitable for 157-nm lithography.

Paper Details

Date Published: 26 June 2003
PDF: 7 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485369
Show Author Affiliations
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masato Shigematsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiro Miyoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)
Kenichi Mizusawa, Nissan Chemical Industries, Ltd. (Japan)
Yasuyuki Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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