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Proceedings Paper

Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography
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Paper Abstract

Since the announcement in March 2002 of plans to develop an advanced light source to meet the future spectral power and cost requirements of photolithography, we have made significant progress in the development and productization of the core technology for an ultra line-narrowed, excimer light source based on a master oscillator-power amplifier (MOPA) approach. In this paper, we will focus on the architecture and performance of the first generation of production-ready, MOPA-based ArF light sources developed at Cymer, Inc. This first generation of MOPA-based ArF light sources is referred to as the XLA 100 product series.

Paper Details

Date Published: 26 June 2003
PDF: 10 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485358
Show Author Affiliations
Vladimir B. Fleurov, Cymer, Inc. (United States)
Daniel J. Colon, Cymer, Inc. (United States)
Daniel J. W. Brown, Cymer, Inc. (United States)
Patrick O'Keeffe, Cymer, Inc. (United States)
Herve Besaucele, Cymer, Inc. (United States)
Alexander I. Ershov, Cymer, Inc. (United States)
Fedor Trintchouk, Cymer, Inc. (United States)
T. Ishihara, Cymer, Inc. (United States)
Paolo Zambon, Cymer, Inc. (United States)
R. J. Rafac, Cymer, Inc. (United States)
A. Lukashev, Cymer, Inc. (United States)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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